Capabilities 

• Proven nanoprobing solution for 10nm technology.
• Configurable with four, six or eight probes for added flexibility and capability.
• Auto tip exchange and auto tip approach for increased productivity and ease of use. 

Measurement modes 

The Hyperion II System’s advanced measurement modes include: 

• Low-noise, high-resolution capacitance-voltage (C-V) to study oxide layers and interface traps.
• Pulsed IV to identify open and resistive gate defects.
• Elevated temperature probing to study device reliability.

Current voltage (I-V) measurements

Probing multiple transistors within the target area to localize a fault can be time-consuming. The Hyperion II System combines PicoCurrent imaging with I-V probing to quickly find potential defects and measure current-voltage curves, without introducing measurement-related shifts.

Capacitance-voltage (C-V) measurements

C-V is used to study oxide layers, interface traps and charge carrier densities. The Hyperion II System offers high-resolution C-V with excellent impedance control, low leakage and very low noise.

Pulsed I-V measurements

Pulsed I-V is used for studying self-heating of SOI and trapped charge in high-k dielectric. The Hyperion II System enables high-speed testing of devices with less than one nanosecond rise time.